NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：257.29 Kbytes 页数：25 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：831.88 Kbytes 页数：26 Pages

CEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION\nNEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and relia • HIGH GAIN BANDWIDTH PRODUCT:\n    fT= 7 GHz\n• LOW NOISE FIGURE:\n    1.1 dB at 1 GHz\n• HIGH COLLECTOR CURRENT:100 mA\n• HIGH RELIABILITY METALLIZATION\n• LOW COST;

Renesas

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization

文件：63.04 Kbytes 页数：7 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NECs titanium, platinum, gold metallization

文件：63.04 Kbytes 页数：7 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M03 package is ideal for todays portable wireless

文件：37.45 Kbytes 页数：3 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/flat lead style M13 package is ideal for todays portable wireless

文件：19.26 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

DESCRIPTION The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NECs new low profile/ceramic substrate style M23 package is ideal for todays portable w

文件：19.55 Kbytes 页数：2 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：831.88 Kbytes 页数：26 Pages

CEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

文件：257.29 Kbytes 页数：25 Pages

NEC

瑞萨