NE85002技术资料参数供应代理瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NE85002	文件：48.93 Kbytes Page：8 Pages	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo 文件：48.93 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NE85002	文件：207.14 Kbytes Page：10 Pages	GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp 文件：207.14 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NE85002	文件：60.23 Kbytes Page：6 Pages	2 WATT C-BAND POWER GaAs MESFET 文件：60.23 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
NE85002	文件：61.08 Kbytes Page：6 Pages	2 WATT C-BAND POWER GaAs MESFET 文件：61.08 Kbytes 页数：6 Pages	CEL	CEL
NE85002	文件：300 bytes Page：1 Pages	2 WATT C-BAND POWER GaAs MESFET	CEL	CEL
NE8500200	文件：207.14 Kbytes Page：10 Pages	GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp 文件：207.14 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NE8500200	文件：48.93 Kbytes Page：8 Pages	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo 文件：48.93 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NE8500200-RG	文件：48.93 Kbytes Page：8 Pages	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorpo 文件：48.93 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NE8500200-RG	文件：207.14 Kbytes Page：10 Pages	GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp 文件：207.14 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
NE8500200-WB	文件：207.14 Kbytes Page：10 Pages	GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorp 文件：207.14 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

详细参数

型号：
NE85002
制造商：
NEC
制造商全称：
NEC
功能描述：
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百诺芯科技有限公司	NE8500295-8	NEC	23+	TO-59	8510	原装正品代理渠道价格优势	询价
上海意淼电子科技有限公司	NE8500295-8	NEC	23+	NA	20000	全新原装假一赔十	询价
深圳市豪迈兴电子有限公司	NE850R599	NEC	24+	99	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
贸泽芯城（深圳）电子科技有限公司	NE850R599A	NEC	23+		26690	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
千层芯半导体(深圳)有限公司	NE851M03-A	CEL	24+	原厂原封	4000	原装正品	询价
深圳市鹏顺微电子科技有限公司	NE851M03-A	CEL	2022+	SOT-363	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市宏捷佳电子科技有限公司	NE851M03-A	CEL	25+	6-TSSOP SC-88 SOT-363	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
齐创科技(上海,北京,青岛)有限公司	NE851M03-T1-A	原厂正品	23+	SOT523	5000	原装正品,假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	NE851M03-T1-A	NEC	25+	SOP-8	18000	原厂直接发货进口原装	询价
中天科工半导体（深圳）有限公司	NE851M03-T1-A	RENESAS/瑞萨	20+	SOT423	49000	原装优势主营型号-可开原型号增税票	询价

更多NE85002供应商更新时间2026-1-19 16:01:00

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