NE76184A-T1

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NE76184A-T1

GaAs MES FET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

NE76184A-T1

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET; • Low noise figure & High associated gain\nNF = 0.8 dB TYP., Ga= 12 dB TYP. at f = 4 GHz;

DESCRIPTION\nNE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems.\nFEATURES\n• Low noise figure & High associated gain\nNF = 0.8 dB TYP., Ga= 12 dB TYP. at f = 4 GHz

NE76184A-T1A

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NE76184A-T1A

GaAs MES FET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl