L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件：92.33 Kbytes 页数：16 Pages

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GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

文件：243.57 Kbytes 页数：18 Pages

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GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

文件：243.57 Kbytes 页数：18 Pages

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瑞萨

L to Ku Band Low Noise N-Channel GaAs MESFET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件：86.07 Kbytes 页数：8 Pages

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L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件：92.33 Kbytes 页数：16 Pages

NEC

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C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET

DESCRIPTION The NE72118 is a high performance gallium arsenide metal semiconductor field effect transistor (MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This devices low phase noise and high fT make it an excellent choice for oscillator applications on a digital LNB

文件：46.7 Kbytes 页数：4 Pages

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GaAs MES FET

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm (recessed gate) • Gate Width: Wg = 330 mm • 4 pins super mini mold • Tape & reel packaging only available

文件：201.93 Kbytes 页数：18 Pages

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GaAs MES FET

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm (recessed gate) • Gate Width: Wg = 330 mm • 4 pins super mini mold • Tape & reel packaging only available

文件：201.93 Kbytes 页数：18 Pages

RENESAS

瑞萨

C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET

DESCRIPTION The NE72118 is a high performance gallium arsenide metal semiconductor field effect transistor (MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This devices low phase noise and high fT make it an excellent choice for oscillator applications on a digital LNB

文件：46.7 Kbytes 页数：4 Pages

NEC

瑞萨

C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET

DESCRIPTION The NE72118 is a high performance gallium arsenide metal semiconductor field effect transistor (MESFET), housed in a low cost plastic surface mount package (SOT 23 style). This devices low phase noise and high fT make it an excellent choice for oscillator applications on a digital LNB

文件：46.7 Kbytes 页数：4 Pages

NEC

瑞萨