GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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GaAs MES FET

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitabl

文件：193.89 Kbytes 页数：12 Pages

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GaAs MES FET

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitabl

文件：193.89 Kbytes 页数：12 Pages

RENESAS

瑞萨

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：65.72 Kbytes 页数：10 Pages

NEC

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fre

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NEC

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GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

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丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

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LOW NOISE L TO K-BAND GaAs MESFET

文件：95.45 Kbytes 页数：8 Pages

CEL

L to Ku Band Low Noise N-Channel GaAs MESFET

文件：90.24 Kbytes 页数：8 Pages

CEL