GaAs MES FET

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm (recessed gate) • Gate Width: Wg = 330 mm • 4 pins super mini mold • Tape & reel packaging only available

文件：201.93 Kbytes 页数：18 Pages

RENESAS

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated w

文件：32.97 Kbytes 页数：5 Pages

NEC

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GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated w

文件：32.97 Kbytes 页数：5 Pages

NEC

瑞萨

GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated w

文件：32.97 Kbytes 页数：5 Pages

NEC

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C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件：60.16 Kbytes 页数：8 Pages

NEC

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C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件：60.16 Kbytes 页数：8 Pages

NEC

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C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件：60.16 Kbytes 页数：8 Pages

NEC

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NPN SILICON GENERAL PURPOSE TRANSISTOR

DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NECs highly reliable platinum-silicide, titanium, platinum, and gold

文件：39.24 Kbytes 页数：5 Pages

NEC

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NPN SILICON GENERAL PURPOSE TRANSISTOR

DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NECs highly reliable platinum-silicide, titanium, platinum, and gold

文件：39.24 Kbytes 页数：5 Pages

NEC

瑞萨

NPN SILICON GENERAL PURPOSE TRANSISTOR

DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NECs highly reliable platinum-silicide, titanium, platinum, and gold

文件：39.24 Kbytes 页数：5 Pages

NEC

瑞萨