NE721S01-T1中文资料瑞萨数据手册PDF规格书

DESCRIPTION

The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NECs latest high performance/low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications.

FEATURES

• HIGH POWER GAIN: 7 dB TYP at 12 GHz

• HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz

• LG = 0.8 µm, WG = 330 µm

• LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz

• LOW COST PLASTIC PACKAGE