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NE72218

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件:60.16 Kbytes 页数:8 Pages

NEC

瑞萨

NE72218

C TO X BAND N-CHANNEL GaAs MESFET

文件:37.46 Kbytes 页数:5 Pages

CEL

NE72218

C TO X BAND N-CHANNEL GaAs MESFET

CEL

NE72218-T1

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件:60.16 Kbytes 页数:8 Pages

NEC

瑞萨

NE72218-T2

C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package • Tape & reel packaging only available

文件:60.16 Kbytes 页数:8 Pages

NEC

瑞萨

NE72218-T1

C TO X BAND N-CHANNEL GaAs MESFET

文件:37.46 Kbytes 页数:5 Pages

CEL

详细参数

  • 型号:

    NE72218

  • 功能描述:

    射频GaAs晶体管 RO 551-NE34018 5/04

  • RoHS:

  • 制造商:

    TriQuint Semiconductor

  • 技术类型:

    pHEMT

  • 频率:

    500 MHz to 3 GHz

  • 增益:

    10 dB

  • 噪声系数:

    正向跨导

  • gFS(最大值/最小值):

    4 S 漏源电压

  • 闸/源击穿电压:

    - 8 V

  • 漏极连续电流:

    3 A

  • 最大工作温度:

    + 150 C

  • 功率耗散:

    10 W

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
25+
SOT-343
20300
RENESAS/瑞萨原装特价NE72218即刻询购立享优惠#长期有货
询价
RENESAS/瑞萨
23+
SOT-343
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
RENESAS/瑞萨
2025+
SOT-343
5000
原装进口价格优 请找坤融电子!
询价
NEC
21+
SOT-343
10000
原装现货假一罚十
询价
NEC
22+
SOT-343
3000
原装正品,支持实单
询价
NEC
24+
NA/
5000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NEC
24+
SOT-343
880000
明嘉莱只做原装正品现货
询价
NEC
24+
SOT-343
60000
询价
NEC
16+
SOT343
10000
进口原装现货/价格优势!
询价
NEC
24+
SOT-343SOT-323-4
36200
新进库存/原装
询价
更多NE72218供应商 更新时间2025-12-11 14:13:00