C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

丝印：E；GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm

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RENESAS

瑞萨

Extended Duty Pressure Switch With Direct Action Blade Contacts

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Honeywell

霍尼韦尔

Set Points from 0.5 to 150 psi

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HONEYWELL-ACC

霍尼韦尔

Extended Duty Pressure Switch With Direct Action Blade Contacts

文件：127.45 Kbytes 页数：2 Pages

Honeywell

霍尼韦尔