NE76184A

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NE76184A

GaAs MES FET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

NE76184AS

GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre

NE76184AS

GENERAL PURPOSE L TO X-BAND GaAs MESFET;

DESCRIPTION\nNE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxy sealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76184AS is suitable for DBS, TVRO, GPS and other\ncommercial applications.• LOW NOISE FIGURE:\n0.8 dB typical at 4 GHz\n• HIGH ASSOCIATED GAIN:\n12 dB typical at 4 GHz\n•LG= 1.0 µm, WG= 400 µm\n• LOW COST METAL/CERAMIC PACKAGE\n• TAPE & REEL PACKAGING OPTION AVAILABLE

NE76184A-SL

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NE76184A-SL

GENERAL PURPOSE L TO X-BAND GaAs MESFET

DESCRIPTION NE76184ASisahighperformancegalliumarsenidemetalsemiconductorfieldeffecttransistorhousedinanepoxysealed,metal/ceramicpackage.Itslownoisefiguremakesthisdeviceappropriateforuseinthesecondorthirdstagesoflownoiseamplifiersoperatinginthe1-12GHzfre

NE76184A-SL

GaAs MES FET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

NE76184A-T1

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NE76184A-T1

GaAs MES FET

GENERALPURPOSEFETN-CHANNELGaAsMESFET DESCRIPTION NE76184AisaN-channelGaAsMESFEThousedinceramic package.Thedeviceisfabricatedbyionimplantationfor improvedRFandDCperformancereliabilityanduniformity.Its excellentlownoiseandhighassociatedgainmakeitsuitabl

NE76184A-T1

GENERAL PURPOSE FET N-CHANNEL GaAs MES FET; • Low noise figure & High associated gain\nNF = 0.8 dB TYP., Ga= 12 dB TYP. at f = 4 GHz;

DESCRIPTION\nNE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems.\nFEATURES\n• Low noise figure & High associated gain\nNF = 0.8 dB TYP., Ga= 12 dB TYP. at f = 4 GHz