GaAs MES FET

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini

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RENESAS

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L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz • High associated gain Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini mold • Tape & reel packaging only available

文件：51.65 Kbytes 页数：8 Pages

NEC

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GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER

文件：32.58 Kbytes 页数：4 Pages

NEC

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模块

UBLOX

上传：深圳市柯尔基电子有限公司

GPS

U-BLOX

上传：深圳市盛泰捷科电子有限公司