NPN SILICON GENERAL PURPOSE TRANSISTOR

DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NECs highly reliable platinum-silicide, titanium, platinum, and gold

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NEC

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NPN MEDIUM POWER UHF-VHF TRANSISTOR

FEATURES ● HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz ● EXCELLENT INTERMODULATION CHARACTERISTICS AT HIGH OUTPUT LEVELS ● LOW NOISE FIGURE: 3.5 dB at 200 MHz ● EXCELLENT WIDE BAND CATV AMPLIFIER

文件：340.98 Kbytes 页数：7 Pages

NEC

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NPN MEDIUM POWER UHF-VHF TRANSISTOR

FEATURES ● HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz ● EXCELLENT INTERMODULATION CHARACTERISTICS AT HIGH OUTPUT LEVELS ● LOW NOISE FIGURE: 3.5 dB at 200 MHz ● EXCELLENT WIDE BAND CATV AMPLIFIER

文件：340.98 Kbytes 页数：7 Pages

NEC

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NPN MEDIUM POWER UHF-VHF TRANSISTOR

FEATURES ● HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz ● EXCELLENT INTERMODULATION CHARACTERISTICS AT HIGH OUTPUT LEVELS ● LOW NOISE FIGURE: 3.5 dB at 200 MHz ● EXCELLENT WIDE BAND CATV AMPLIFIER

文件：340.98 Kbytes 页数：7 Pages

NEC

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GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 Pm • Gate width: Wg = 280 Pm

文件：195.08 Kbytes 页数：10 Pages

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GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件：193.69 Kbytes 页数：14 Pages

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丝印：A；GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件：193.69 Kbytes 页数：14 Pages

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GaAs MES FET

GENERAL PURPOSE N-CHANNEL GaAs MES FET DESCRIPTION NE76038 is a N-channel GaAs MES FET housed in plastic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable fo

文件：193.69 Kbytes 页数：14 Pages

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GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A) Ga = 9.0 dB TYP. at f = 12 GHz (NE76083A-2.4) • Ga

文件：197.97 Kbytes 页数：10 Pages

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GaAs MES FET

C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0.3 mm • Gate width : Wg = 280 mm

文件：190.51 Kbytes 页数：14 Pages

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