首页 >NE7>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

NE713

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件:92.33 Kbytes 页数:16 Pages

NEC

瑞萨

NE713

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

文件:243.57 Kbytes 页数:18 Pages

RENESAS

瑞萨

NE71300

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

文件:91.26 Kbytes 页数:8 Pages

NEC

瑞萨

NE71300L

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

文件:91.26 Kbytes 页数:8 Pages

NEC

瑞萨

NE71300-L

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件:92.33 Kbytes 页数:16 Pages

NEC

瑞萨

NE71300-L

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

文件:243.57 Kbytes 页数:18 Pages

RENESAS

瑞萨

NE71300M

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

文件:91.26 Kbytes 页数:8 Pages

NEC

瑞萨

NE71300-M

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

FEATURES Low noise figure NF = 0.6 dB TYP. at f = 4 GHz High associated gain Ga = 14 dB TYP. at f = 4 GHz Gate width: Wg = 280µm Gate Length: Lg = 0.3µm

文件:92.33 Kbytes 页数:16 Pages

NEC

瑞萨

NE71300-M

GaAs MES FET

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm

文件:243.57 Kbytes 页数:18 Pages

RENESAS

瑞萨

NE71300N

LOW NOISE L TO K-BAND GaAs MESFET

DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is sui

文件:91.26 Kbytes 页数:8 Pages

NEC

瑞萨

产品属性

  • 产品编号:

    NE7

  • 制造商:

    Essentra Components

  • 类别:

    电缆,电线 - 管理 > 电缆支撑与紧固件

  • 系列:

    Richco

  • 包装:

    散装

  • 类型:

    线夹,P 型

  • 开口尺寸:

    0.438"(11.13mm)

  • 安装类型:

    紧固件

  • 材料:

  • 颜色:

    黑色,银色

  • 宽度:

    0.375"(9.53mm)

  • 面板孔尺寸:

    0.204"(5.18mm)

  • 材料厚度:

    0.031"(0.80mm)

  • 特性:

    保护涂层

  • 描述:

    CBL CLAMP P-TYPE FASTENER

供应商型号品牌批号封装库存备注价格
Essentra
22+
NA
168
加我QQ或微信咨询更多详细信息,
询价
NEC
01+
178
全新原装进口自己库存优势
询价
飞利谱
23+
SOP8
2800
绝对全新原装!现货!特价!请放心订购!
询价
SIG
24+/25+
7
原装正品现货库存价优
询价
原厂正品
23+
SOT343
7430
原装正品,假一罚十
询价
恩XP
1215+
SMD-8
150000
全新原装,绝对正品,公司大量现货供应.
询价
NEC
24+
SMT36
6980
原装现货,可开13%税票
询价
NEC
24+
TO-50
7157
新进库存/原装
询价
NEC
25+
SMT-89
230
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NEC
13+
SMD
18838
原装分销
询价
更多NE7供应商 更新时间2025-12-4 10:09:00