丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

丝印：J；GaAs MES FET

L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. FEATURES • Low noise figure & High associated gain NF = 0.8 dB TY

文件：170.55 Kbytes 页数：8 Pages

RENESAS

瑞萨

模块

UBLOX

上传：深圳市柯尔基电子有限公司

GPS

U-BLOX

上传：深圳市盛泰捷科电子有限公司

GPS

UBLOX

上传：深圳市宇创芯科技有限公司