10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

文件：120.15 Kbytes 页数：2 Pages

MICROSEMI

美高森美

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

文件：120.15 Kbytes 页数：2 Pages

MICROSEMI

美高森美

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Met

文件：104.72 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • POUT = 150 WATTS • GP = 14 dB MINIMUM •

文件：161.37 Kbytes 页数：4 Pages

ADPOW

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

文件：120.53 Kbytes 页数：2 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • IMD = –30 dB • POUT = 150 WATTS • GP =

文件：185.84 Kbytes 页数：5 Pages

ADPOW

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

文件：120.53 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Schottky Barrier Rectifier

FEATURES ·Guardring for overvoltage protection ·Low power loss, high efficiency ·Low forward voltage drop ·High forward surge capability APPLICATIONS ·Freewheeling diodes ·DC/DCconverters ·Polarity protection application

文件：339.32 Kbytes 页数：2 Pages

ISC

无锡固电

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • OPTIMIZED FOR SSB • 30 MHz • 50 VOLTS • IMD — 30 dB • GOLD METALLIZATION

文件：97.63 Kbytes 页数：3 Pages

ADPOW

PNP RF Amplifier Transistor Surface Mount

PNP RF Amplifier Transistor Surface Mount

文件：28.85 Kbytes 页数：1 Pages

LRC

乐山无线电