PNP RF Amplifier Transistor Surface Mount

PNP RF Amplifier Transistor Surface Mount

文件：28.85 Kbytes 页数：1 Pages

LRC

乐山无线电

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts

文件：86.81 Kbytes 页数：2 Pages

MICROSEMI

美高森美

10 AMP SCHOTTKY RECTIFIER

10 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● Low Forward Voltage ● 150°C Junction Temperature ● Reverse Energy Tested

文件：113 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Schottky Barrier Rectifier

FEATURES • Low Forward Voltage • 150℃ Operating Junction Temperature • Guaranteed Reverse Avalanche • Low Power Loss/High Efficiency • High Surge Capacity • Low Stored Charge Majority Carrier Conduction • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：345.87 Kbytes 页数：2 Pages

ISC

无锡固电

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts

文件：86.81 Kbytes 页数：2 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS

DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 12.5 VOLTS • POU

文件：98.37 Kbytes 页数：4 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 12.5 VOLTS • POU

文件：91.64 Kbytes 页数：4 Pages

ADPOW

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● VRRM 40 to 60 Volts

文件：86.81 Kbytes 页数：2 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION •

文件：92.35 Kbytes 页数：6 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. Features · 30 MHz · 28 VOLTS · GOLD METALLIZATION ·

文件：90.94 Kbytes 页数：3 Pages

ADPOW