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MS1077

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30dB ◾

文件:101.51 Kbytes 页数:4 Pages

MICROSEMI

美高森美

MS1078

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. KEY FEATURES ◾ Optimized for SSB ◾ 30 MHz ◾ 28 Volts ◾ IMD –30d

文件:102.26 Kbytes 页数:4 Pages

MICROSEMI

美高森美

MS1079

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 50 VOLTS • POUT = 220 W • GP = 13 dB MINIMUM • COMMON EMITTER CONFIGURATI

文件:263.74 Kbytes 页数:4 Pages

ADPOW

MS108

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件:87.69 Kbytes 页数:2 Pages

MICROSEMI

美高森美

MS109

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件:87.69 Kbytes 页数:2 Pages

MICROSEMI

美高森美

MS110

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件:104.44 Kbytes 页数:2 Pages

MICROSEMI

美高森美

MS110

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • 175 °C Junction Temperature • VRRM 80 to 100 Volts

文件:87.69 Kbytes 页数:2 Pages

MICROSEMI

美高森美

MS110

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

文件:109.87 Kbytes 页数:3 Pages

PANJIT

強茂

MS110

SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Metal to silicon rectifier. majority carrier conduction • Guard ring for overvoltage protection • Low power loss,high efficiency • For surface mounted applications • High current capacity ,Low forward

文件:6.09774 Mbytes 页数:2 Pages

KISEMICONDUCTOR

MS1100

丝印:1100;Package:SOT23-6;16-Bit ADC with On-board Reference

PRODUCT DESCRIPTION The MS1100 is a 16bit high-precision ADC. The on-board reference provides a differential input range of ±2.048V. The MS1100 uses an I2C serial interface. The power supply ranges from 2.7V to 5.5V. The MS1100 can perform conversions at rates of 15, 30, 60 or 240 samples per

文件:411.5 Kbytes 页数:16 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

产品属性

  • 产品编号:

    MS1

  • 制造商:

    Carlo Gavazzi Inc.

  • 类别:

    传感器,变送器 > 磁性传感器 - 位置,接近,速度(模块)

  • 包装:

  • 描述:

    SEN PROX MAG RECT CO

供应商型号品牌批号封装库存备注价格
Altech Corp.
2022+
1
全新原装 货期两周
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MS
24+
SOT23-6
72000
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PANJIT/强茂
21+
DO-214AC
50000
百域芯优势 实单必成 可开13点增值税
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Hirose
22+
NA
8
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最新
2000
原装正品现货
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PANJIT
24+
SMAF
85430
原装现货假一赔十
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RUNMENG
23+
QFN32
9000
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RENMENG
2023+
SOT-23-6
8800
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FIGARO
2025+
VOC
3715
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ON
24+
SOIC-16
6000
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更多MS1供应商 更新时间2026-1-24 9:50:00