SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Metal to silicon rectifier. majority carrier conduction • Guard ring for overvoltage protection • Low power loss,high efficiency • For surface mounted applications • High current capacity ,Low forward

文件：6.09774 Mbytes 页数：2 Pages

KISEMICONDUCTOR

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier. majority carrier conduction • Low power loss,

文件：109.87 Kbytes 页数：3 Pages

PANJIT

強茂

CIT SWITCH

SPECIFICATIONS Switch Function SPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

文件：119.88 Kbytes 页数：1 Pages

CIT

CIT SWITCH

SPECIFICATIONS Switch Function SPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

文件：119.88 Kbytes 页数：1 Pages

CIT

CIT SWITCH

SPECIFICATIONS Switch Function SPDT Electrical Ratings 200mA @ 30VDC Electrical Life 10,000 cycles typical Contact Resistance

文件：119.88 Kbytes 页数：1 Pages

CIT

RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS

DESCRIPTION: The MS1202 is a epitaxial silicon NPN transistor designed for 12.5 volt class C applications in the 118 – 136 MHz frequency band and 28 volt FM ground station applications. Gold metalization and emitter ballast resistors provide long term product ruggedness and reliability. Features

文件：65.05 Kbytes 页数：3 Pages

MICROSEMI

美高森美

CIT SWITCH

CIT RELAY & SWITCH

文件：121.46 Kbytes 页数：1 Pages

CIT

CIT SWITCH

CIT RELAY & SWITCH

文件：121.46 Kbytes 页数：1 Pages

CIT

CIT SWITCH

CIT RELAY & SWITCH

文件：121.46 Kbytes 页数：1 Pages

CIT

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The SD1019 is a 28 volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes nichrome aluminum metallization to achieve infinite VSWR at rated operating conditions. Features ● CLASS C TRANSISTOR ● FREQUENCY 136MHz ● VOLTAGE 28V

文件：102.47 Kbytes 页数：3 Pages

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