HELI-COIL® Tangless® Inserts Cross-Reference

Technical Bulletin HC600

文件：3.32865 Mbytes 页数：16 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HELI-COIL® Tangless® Inserts Cross-Reference

Technical Bulletin HC600

文件：3.32865 Mbytes 页数：16 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HELI-COIL® Tangless® Inserts Cross-Reference

Technical Bulletin HC600

文件：3.32865 Mbytes 页数：16 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

CIT SWITCH

CIT RELAY & SWITCH

文件：132.03 Kbytes 页数：1 Pages

CIT

CIT SWITCH

CIT RELAY & SWITCH

文件：132.03 Kbytes 页数：1 Pages

CIT

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM CO

文件：454.5 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 28 VOLTS • IMD = -28 dB • POUT = 30 WATTS • GP = 18 dB MINIMUM • COMMON E

文件：61.83 Kbytes 页数：3 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15 dB • COMMON EMIT

文件：114.49 Kbytes 页数：3 Pages

ADPOW

RF & MICROWAVE TRANSISTORS HF SSB APPLICATION

Features • 30MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15dB • COMMON EMITTER CONFIGURATION

文件：121.21 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

CIT SWITCH

CIT RELAY & SWITCH

文件：117.84 Kbytes 页数：1 Pages

CIT