RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15 dB • COMMON EMIT

文件：114.49 Kbytes 页数：3 Pages

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RF & MICROWAVE TRANSISTORS HF SSB APPLICATION

Features • 30MHz • 12.5 VOLTS • GOLD METALIZATION • POUT = 20 W MINIMUM • GP = 15dB • COMMON EMITTER CONFIGURATION

文件：121.21 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：M113；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 18V 30MHZ M113

MICROSEMI

美高森美