RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1263 is a NPN silicon RF power transistor designed for 12.5-volt UHF amplifier applications operating to 512 MHz. The MS1263 has internal impedance matching for broadband operation and diffused emitter ballast for high load VSWR tolerance. Features · 512 MHz · 12.5

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ADPOW

RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS

APT

晶科电子

DC-4000 MHZ SILICON GERMANIUM HBT CASCADEABLE GAIN BLOCK

[Sirenza] Product Description Sirenza Microdevices’ SGA-1263 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 4 GHz. Product Features • DC-4000 MHz Operation • Single Supply Voltage •

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ETCList of Unclassifed Manufacturers

未分类制造商

Hyperabrupt Junction Tuning Varactors

Description The SMV1263 series of silicon hyperabrupt junction varactor diodes are designed for 3 V platforms. The high capacitance ratio and low reverse voltage of these varactors make them attractive for low phase noise Voltage Controlled Oscillators (VCOs) in wireless systems up to and over 2.

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SKYWORKS

思佳讯

500mA Fixed Output CMOS LDO with Shutdown

General Description The TC1263 is a fixed output, high accuracy (typically ±0.5) CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1263’s CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically

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MICROCHIP

微芯科技