RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • 30 MHz • 28 VOLTS • IMD = -28 dB • POUT = 30 WATTS • GP = 18 dB MINIMUM • COMMON E

文件：61.83 Kbytes 页数：3 Pages

Microsemi

美高森美

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM CO

文件：454.5 Kbytes 页数：3 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：M113；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 36V 30MHZ M113

Microsemi

美高森美