RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

文件：343.23 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

文件：343.23 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz. • Typical GSM Performanc

文件：343.23 Kbytes 页数：8 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

Motorola

摩托罗拉

RF Power Field Effect Transistors

恩XP

1800-1880 MHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview MRF18030ALR3, MRF18030ALSR3 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical GSM Performance:\nPower Gain — 14 dB (Typ) @ 30 Watts\n\tEfficiency — 50% (Typ) @ 30 Watts\n\n•Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power\n\n•Internally Matched for Ease of Use\n\n•High Gain, High Efficiency and High Linearity\n\n•Integrated ESD Protection\n\n•De;

恩XP