Multi-Chip TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：171.27 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：180.81 Kbytes 页数：4 Pages

DIODES

美台半导体

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：41.27 Kbytes 页数：2 Pages

DIODES

美台半导体

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

文件：110.51 Kbytes 页数：3 Pages

UTC

友顺

DUAL TRANSISTOR

DUAL TRANSISTOR (NPN+NPN) FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available(MMDT5401) ● Ideal for Medium Power Amplification and Switching

文件：283.06 Kbytes 页数：4 Pages

JIANGSU

长电科技

Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f

文件：114.43 Kbytes 页数：2 Pages

MCC

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：180.81 Kbytes 页数：4 Pages

DIODES

美台半导体

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：180.81 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：K4N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：396.73 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

文件：110.51 Kbytes 页数：3 Pages

UTC

友顺