Lightning Surge Protectors for Electronics Equipment M-RESTER

文件：105.39 Kbytes 页数：3 Pages

MSYSTEM

爱模

250V 0.21Ω N-channel MOSFET

 Description MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI an

文件：727.19 Kbytes 页数：10 Pages

MGCHIP

丝印：25R210RZ；Package：TO-252；250V 0.21Ω N-channel MOSFET

 Description MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI an

文件：727.19 Kbytes 页数：10 Pages

MGCHIP

600V 1.0Ω N-channel MOSFET

 Description MMD60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：769.19 Kbytes 页数：10 Pages

MGCHIP

丝印：60R1K0RFZ；Package：TO-252；600V 1.0Ω N-channel MOSFET

 Description MMD60R1K0RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：769.19 Kbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：352.99 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：353.48 Kbytes 页数：2 Pages

ISC

无锡固电

600V 0.40Ω N-channel MOSFET

 Description MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：767.02 Kbytes 页数：10 Pages

MGCHIP

丝印：60R400RFZ；Package：TO-252；600V 0.40Ω N-channel MOSFET

 Description MMD60R400RFZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI t

文件：767.02 Kbytes 页数：10 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.2 Kbytes 页数：2 Pages

ISC

无锡固电