MMD

Lightning Surge Protectors for Electronics Equipment M-RESTER

MMD25R210RZ

250V 0.21Ω N-channel MOSFET

Description MMD25R210RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusingoptimized chargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIan

MMD25R210RZRH

Marking：25R210RZ；Package：TO-252；250V 0.21Ω N-channel MOSFET

Description MMD25R210RZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythatcan realizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusingoptimized chargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIan

MMD60R1K0RFZ

600V 1.0Ω N-channel MOSFET

Description MMD60R1K0RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt

MMD60R1K0RFZRH

Marking：60R1K0RFZ；Package：TO-252；600V 1.0Ω N-channel MOSFET

Description MMD60R1K0RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt

MMD60R360PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD60R360QRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD60R400RFZ

600V 0.40Ω N-channel MOSFET

Description MMD60R400RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt

MMD60R400RFZRH

Marking：60R400RFZ；Package：TO-252；600V 0.40Ω N-channel MOSFET

Description MMD60R400RFZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIt

MMD60R580PBRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.58Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC