MMDF3P03HD

DUAL TMOS POWER MOSFET 30 VOLTS

MediumPowerSurfaceMountProducts TMOSDualP-ChannelFieldEffectTransistors DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplicationswherep

MMDF4C03HD

COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MediumPowerSurfaceMountProducts ComplementaryTMOSFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.The

MMDF4N01HD

DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Th

MMDF5N02Z

DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelwithMonolithicZenerESDProtectedGate EZFETs™areanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocessandcontainmonolithicback–to–backzenerdiodes.Thesezenerdiodesprovideprotectionagain

MMDF6N02HD

DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS

DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.TheseminiaturesurfacemountMOSFETsfeaturelowRDS(on)andtruelogiclevelperformance.DualHDTMOSdevicesaredesignedforuseinlowvoltage,highspeedswitchingapplication

MMDF6N03HD

DUAL TMOS POWER MOSFET 30 VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors DualHDTMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocess.TheseminiaturesurfacemountMOSFETsfeaturelowRDS(on)andtruelogiclevelperformance.DualH

MMDF7N02Z

DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelwithMonolithicZenerESDProtectedGate EZFETs™areanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityTMOSprocessandcontainmonolithicback–to–backzenerdiodes.Thesezenerdiodesprovideprotectionagainst

MMDFS2P102

P-Channel Power MOSFET with Schottky Rectifier 20 Volts

FETKYMOSFETandSchottkyRectifier TheFETKY™productfamilyincorporateslowRDS(on),truelogiclevelMOSFETspackagedwithindustryleading,lowforwarddrop,lowleakageSchottkyBarrierrectifierstoofferhighefficiencycomponentsinaspacesavingconfiguration.IndependentpinoutsforT

MMDJ3N03BJT

DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =100Vdc(Min)@IC=1.0Adc =

MMDJ3P03BJT

DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =140(Min)@IC=1.2Adc =125(Min)@IC=3.0Adc •LowCollector–EmitterSaturationVoltage—VCE(sat)