型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
DUAL TMOS POWER MOSFET 30 VOLTS Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where p 文件:203.77 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS Medium Power Surface Mount Products Complementary TMOS Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. The 文件:275.7 Kbytes 页数:12 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. Th 文件:281.25 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection again 文件:186.7 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching application 文件:193.1 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL TMOS POWER MOSFET 30 VOLTS Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual H 文件:207.39 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS Medium Power Surface Mount Products TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate EZFETs™ are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process and contain monolithic back–to–back zener diodes. These zener diodes provide protection against 文件:190.73 Kbytes 页数:10 Pages | Motorola 摩托罗拉 | Motorola | ||
P-Channel Power MOSFET with Schottky Rectifier 20 Volts FETKY MOSFET and Schottky Rectifier The FETKY™ product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for T 文件:248.85 Kbytes 页数:12 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES Plastic Power Transistors SO–8 for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 100 Vdc (Min) @ IC = 1.0 Adc = 文件:122.92 Kbytes 页数:4 Pages | Motorola 摩托罗拉 | Motorola | ||
DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES Plastic Power Transistors SO–8 for Surface Mount Applications • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Saturation Voltage — VCE(sat) 文件:119.19 Kbytes 页数:4 Pages | Motorola 摩托罗拉 | Motorola |
技术参数
- 产品材质:
聚酯薄膜
- 产品用途:
交流电源杂防回路
- 额定电压(V):
125V.a.c250V.a.c
- 容量范围(μF):
0.010~1.0μF0.010~0.47μF
- 使用范围温度(℃):
-40℃~+105℃
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WJ |
24+ |
SOT-89 |
12 |
现货特价 |
询价 | ||
MOT |
25+ |
SOP6 |
18000 |
原厂直接发货进口原装 |
询价 | ||
ON |
23+ |
SOIC |
2100 |
全新进口原装现货,价优 |
询价 | ||
DIODES |
23+ |
SOT-363 |
5500 |
现货,全新原装 |
询价 | ||
MOT |
25+ |
SOP8 |
3000 |
强调现货,随时查询! |
询价 | ||
DISCRETE |
3000 |
ON |
267000 |
询价 | |||
SECOS |
24+ |
SOT363 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
MOTOROLA |
25+ |
SO-8 |
2560 |
绝对原装!现货热卖! |
询价 | ||
TEMIC |
24+ |
CSOP |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
询价 | ||
长电 |
25+ |
SOT-363 |
525000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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