Schottky Barrier Diode

Features ◇ Low noise figure—6.0dB Typ.@1.0GHz. ◇ Very Low Capacitance—less than 1.0pF @0V. ◇ Ultra-small surface mount package. ◇ PN junction guard ring for transient and ESD protection. Applications ◇ For high-efficiency UHF and VHF detector applications.

文件：243.04 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Schottky Barrier Diode

FEATURES ● Low noise figure—6.0dB Typ.@1.0GHz. ● Very Low Capacitance—less than 1.0pF @0V. ● Ultra-small surface mount package. ● PN junction guard ring for transient and ESD protection. APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

文件：221.23 Kbytes 页数：3 Pages

DSK

Schottky Barrier Diode

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 G

文件：110.8 Kbytes 页数：3 Pages

ETL

亚历电子

Schottky Barrier Diode

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 G

文件：104.82 Kbytes 页数：3 Pages

LRC

乐山无线电

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Noise Figure 6.0dB Typ. @ 1.0GHz PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.48 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Very Low Capacitance − Less than 1.0 pF @ 0 V • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • These Devices

文件：183.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.57 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Diode

FEATURES ● Low reverse leakage—IR=13nA(Typ). ● Very Low Capacitance—less than 1.5pF @15V. ● Extremely Low minority carrier lifetime—15ps(Typ). ● Pb-Free package is available. APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

文件：220.99 Kbytes 页数：3 Pages

DSK

Schottky Barrier Diode

Features ◇ Low reverse leakage—IR=13nA(Typ). ◇ Very Low Capacitance—less than 1.5pF @15V. ◇ Extremely Low minority carrier lifetime—15ps(Typ). ◇ Pb-Free package is available. Applications ◇ For high-efficiency UHF and VHF detector applications.

文件：238.52 Kbytes 页数：2 Pages

LUGUANG

鲁光电子

Silicon Hot-Carrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirem

文件：118.1 Kbytes 页数：3 Pages

LRC

乐山无线电