MMD70R600PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=7.3A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD70R750PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=5.8A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

MMD70R900PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=5A@TC=25℃ ·DrainSourceVoltage :VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MMD80R1K2PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=4.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MMD80R900PCRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MMD80R900PRH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MMD80R900QZ

800V 0.90Ω N-channel MOSFET

Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MMD80R900QZRH

Marking：80R900QZ；Package：TO-252-2L；800V 0.90Ω N-channel MOSFET

Description MMD80R900QZispowerMOSFETusingMagnachip’sadvancedsuperjunctiontechnologythat canrealizeverylowon-resistanceandgatecharge.Itwillprovidemuchhighefficiencybyusing optimizedchargecouplingtechnology.TheseuserfriendlydevicesgiveanadvantageofLowEMIto

MMDF1N05E

DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOS™devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofw

MMDF1N05E

Power MOSFET 2 A, 50 V, N-Channel SO-8, Dual

TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on) andtruelogiclevelperformance.Theyarecapableofwithstanding highenergyintheavalancheandcommutationmodesandthe drain−to−sourcediodehasalowreverserecoverytime.Thesedevices aredesignedforuseinlowvoltage