Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

文件：340.55 Kbytes 页数：15 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

文件：340.55 Kbytes 页数：15 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM

Description The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Utilizing an array of six transis

文件：340.55 Kbytes 页数：15 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features • Operating Voltage: 3

文件：249.24 Kbytes 页数：14 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features • Operating Voltage: 3

文件：249.24 Kbytes 页数：14 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features • Operating Voltage: 3

文件：249.24 Kbytes 页数：14 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features • Operating Voltage: 3

文件：249.24 Kbytes 页数：14 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Atmel brings the solution to applications where fast computing is as mandatory as low consumption, such as aerospace electronics, portable instruments, or embarked systems. Features • Operating Voltage: 3

文件：249.24 Kbytes 页数：14 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Schottky Barrier Diode

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 G

文件：110.8 Kbytes 页数：3 Pages

ETL

亚历电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Noise Figure 6.0dB Typ. @ 1.0GHz PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.48 Kbytes 页数：4 Pages

WTE

Won-Top Electronics