Schottky Barrier Diode

FEATURES ● Low reverse leakage—IR=200nA(Max.). ● Very Low Capacitance—1.0pF @20V. ● Extremely Low minority carrier lifetime. ● High reverse leakage—70V(min.) APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

文件：220.34 Kbytes 页数：3 Pages

DSK

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.62 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Schottky Barrier Diode

FEATURES ● Low reverse leakage—IR=200nA(Max.). ● Very Low Capacitance—1.0pF @20V. ● Extremely Low minority carrier lifetime. ● High reverse leakage—70V(min.) APPLICATIONS ● For high-efficiency UHF and VHF detector applications.

文件：207.8 Kbytes 页数：4 Pages

BILIN

银河微电

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

文件：106.58 Kbytes 页数：3 Pages

ETL

亚历电子

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

文件：106.58 Kbytes 页数：3 Pages

ETL

亚历电子

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max)

文件：105 Kbytes 页数：3 Pages

LRC

乐山无线电

Schottky Barrier Diode

Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance – 1.0 pF @ 20 V • Low Reverse Leakage – 200 nA (max)

文件：39.99 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Reverse Leakage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：51.62 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SURFACE MOUNT FAST SWITCHING DIODE

Silicon Epitaxial Planar Die Construction Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：94.36 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SURFACE MOUNT HIGH-SPEED SWITCHING DIODE

SURFACE MOUNT HIGH-SPEED SWITCHING DIODE Reverse Breakdown Voltage - 100 Volts Peak Forward Current - 200mA

文件：47.77 Kbytes 页数：2 Pages

ZOWIE

智威