丝印：K4N；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

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GWSEMI

唯圣电子

NPN小信号三极管

CBI

创基电子

Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f

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MCC

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Ultra-Small Surface Mount Package • Complementary NPN Type: MMST5401 • Ideal for Low Power Amplification and Switching • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Quali

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DIODES

美台半导体

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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TEL