HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

文件：110.51 Kbytes 页数：3 Pages

UTC

友顺

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：180.81 Kbytes 页数：4 Pages

DIODES

美台半导体

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMDT5401) • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：41.27 Kbytes 页数：2 Pages

DIODES

美台半导体

Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f

文件：114.43 Kbytes 页数：2 Pages

MCC

DUAL TRANSISTOR

DUAL TRANSISTOR (NPN+NPN) FEATURES ● Epitaxial Planar Die Construction ● Complementary PNP Type Available(MMDT5401) ● Ideal for Medium Power Amplification and Switching

文件：283.06 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：K4N；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.40655 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：K4N；Package：SOT-363；NPNNPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMDT5401 • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching

文件：1.44705 Mbytes 页数：5 Pages

JINGHENG

晶恒

Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：235.44 Kbytes 页数：2 Pages

HOTTECH

合科泰

NPNNPN Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(TPMMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.56192 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Multi-Chip TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：171.27 Kbytes 页数：1 Pages

WINNERJOIN

永而佳