| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MMDT5551 | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMDT5401) •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | |
MMDT5551 | NPNNPN Plastic-Encapsulate Transistors Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(TPMMDT5401) IdealforMediumPowerAmplificationandSwitching | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | |
MMDT5551 | DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMDT5401) •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5) | DIODESDiodes Incorporated 美台半导体 | DIODES | |
MMDT5551 | Plastic-Encapsulate Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof200mWattsofPowerDissipation •Idealf | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | |
MMDT5551 | Plastic-Encapsulate Transistors FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | |
MMDT5551 | HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION TheUTCMMDT5551isahighvoltagefast-switchingdualNPNtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | |
MMDT5551 | DUAL TRANSISTOR DUALTRANSISTOR(NPN+NPN) FEATURES ●EpitaxialPlanarDieConstruction ●ComplementaryPNPTypeAvailable(MMDT5401) ●IdealforMediumPowerAmplificationandSwitching | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | |
MMDT5551 | Multi-Chip TRANSISTOR (NPN) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:0.2A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | WINNERJOIN | |
MMDT5551 | Marking：K4N；Package：SOT-363；NPNNPN Plastic-Encapsulate Transistors FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMDT5401 •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | |
MMDT5551 | Marking：K4N；Package：SOT-363；Epitaxial Planar Die Construction Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage LeadFree/RoHSCompliant(Note3) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY |
详细参数
- 型号：
MMDT5551
- 制造商：
DIODES
- 制造商全称：
Diodes Incorporated
- 功能描述：
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
长电 |
+19 |
SOT-363 |
180000 |
原装正品 |
询价 | ||
长电 |
24+ |
SOT-363 |
120000 |
绝对原装正品现货假一罚十 |
询价 | ||
SOT-363 |
2021 |
CJ |
96000 |
全新原装公司现货
|
询价 | ||
DIODES/美台 |
25+ |
SOT-363 |
160244 |
明嘉莱只做原装正品现货 |
询价 | ||
24+ |
5000 |
公司存货 |
询价 | ||||
长电 |
25+23+ |
SOT-363 |
24195 |
绝对原装正品全新进口深圳现货 |
询价 | ||
长电 |
2020+ |
SOT-363 |
120000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
CJ/长电 |
22+ |
SOT-363 |
57000 |
原装正品现货,可开13点税 |
询价 | ||
DIODES |
17PB |
SOT-363 |
20 |
普通 |
询价 | ||
CJ(江苏长电/长晶) |
2447 |
SC-70-6(SOT-363) |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
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