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MMDT5551

Marking:K4N;Package:SOT-363;SOT-363 Plastic-Encapsulate Transistors

Features EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

MMDT5551

Plastic-Encapsulate Transistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMDT5551

Marking:K4N;Package:SOT-363;Dual NPN Small Signal Surface Mount Transistor

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

MMDT5551

Plastic-Encapsulate Transistors

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMDT5551

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMDT5551_2

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMDT5401) •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

DIODESDiodes Incorporated

美台半导体

MMDT5551-7-F

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMDT5401) •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

DIODESDiodes Incorporated

美台半导体

MMDT5551DW

Marking:K4N;Package:SOT-363;Plastic-Encapsulate Transistors

FEATURES EpitaxialPlanarDieConstruction ComplementaryPNPTypeAvailable(MMDT5401) IdealforMediumPowerAmplificationandSwitching

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

MMDT5551G-AL6-R

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION TheUTCMMDT5551isahighvoltagefast-switchingdualNPNtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain

UTCUnisonic Technologies

友顺友顺科技股份有限公司

MMDT5551L-AL6-R

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION TheUTCMMDT5551isahighvoltagefast-switchingdualNPNtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=160V *Highcurrentgain

UTCUnisonic Technologies

友顺友顺科技股份有限公司

详细参数

  • 型号:

    MMDT5551

  • 制造商:

    DIODES

  • 制造商全称:

    Diodes Incorporated

  • 功能描述:

    DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

供应商型号品牌批号封装库存备注价格
长电
+19
SOT-363
180000
原装正品
询价
长电
24+
SOT-363
120000
绝对原装正品现货假一罚十
询价
SOT-363
2021
CJ
96000
全新原装公司现货
询价
DIODES/美台
25+
SOT-363
160244
明嘉莱只做原装正品现货
询价
24+
5000
公司存货
询价
长电
25+23+
SOT-363
24195
绝对原装正品全新进口深圳现货
询价
长电
2020+
SOT-363
120000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
CJ/长电
22+
SOT-363
57000
原装正品现货,可开13点税
询价
DIODES
17PB
SOT-363
20
普通
询价
CJ(江苏长电/长晶)
2447
SC-70-6(SOT-363)
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
更多MMDT5551供应商 更新时间2025-7-25 8:01:00