Multi-Chip General Purpose TRANSISTOR (PNP and NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: ±200 mA Collector-base voltage V(BR)CBO: 180/-160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：83 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

丝印：KNM；Package：SOT-363；Small Surface Mount Transistor

FEATURES ● Complementary pair. ● Ideal for low power amplification and switching. ● Ultra-Small surface mount package. ● Epitaxial planar die construction. APPLICATIONS ● General switching and amplification.

文件：606.72 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pair One 5551-Type NPN One 5401-Type PNP • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：204.37 Kbytes 页数：5 Pages

DIODES

美台半导体

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Complementary Pair One 5551-Type NPN One 5401-Type PNP • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

文件：204.37 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：KNM；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Ideal for low Power Amplification and Switching One 5551(NPN), one 5401(PNP)

文件：130.979 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：K4N；Package：SOT-363；Epitaxial Planar Die Construction

Features Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3)

文件：772.06 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：235.44 Kbytes 页数：2 Pages

HOTTECH

合科泰

丝印：K4N；Package：SOT-363；NPNNPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMDT5401 • Epitaxial Planar Die Construction • Ideal for Medium Power Amplification and Switching

文件：1.44705 Mbytes 页数：5 Pages

JINGHENG

晶恒

NPNNPN Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(TPMMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.56192 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：K4N；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

Features Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT5401) Ideal for Medium Power Amplification and Switching

文件：1.40655 Mbytes 页数：4 Pages

DGNJDZ

南晶电子