HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain

文件：110.51 Kbytes 页数：3 Pages

UTC

友顺

Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Capable of 200mWatts of Power Dissipation • Ideal f

文件：114.43 Kbytes 页数：2 Pages

MCC

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process

文件：125.93 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

文件：108.44 Kbytes 页数：2 Pages

UTC

友顺

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

文件：108.44 Kbytes 页数：2 Pages

UTC

友顺

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat) = 40mV (typ.) @ IC / IB = 50mA / 2.5mA * Transistor elements are independent, elimi

文件：108.44 Kbytes 页数：2 Pages

UTC

友顺

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate

文件：125.6 Kbytes 页数：2 Pages

UTC

友顺

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate

文件：125.6 Kbytes 页数：2 Pages

UTC

友顺

LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate

文件：125.6 Kbytes 页数：2 Pages

UTC

友顺

丝印：TGL6；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 ) Ideal for Medium Power Amplification and Switching DW

文件：1.92853 Mbytes 页数：3 Pages

GWSEMI

唯圣电子