MMDT5401G-AL6-R

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION TheUTC5401isahighvoltagefast-switchingdualPNPtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=-150V *Highcurrentgain

MMDT5401L-AL6-R

HIGH VOLTAGE SWITCHING TRANSISTOR

DESCRIPTION TheUTC5401isahighvoltagefast-switchingdualPNPtransistor.Itischaracterizedwithhighbreakdownvoltage,highcurrentgainandhighswitchingspeed. FEATURES *HighCollector-EmitterVoltage:VCEO=-150V *Highcurrentgain

MMDT5401-TP

Plastic-Encapsulate Transistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Marking:K4M •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •EpoxymeetsUL94V-0flammabilityrating •Moi

MMDT5451

COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPair:15551TypeNPN 15401TypePNP •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •

MMDT5451

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •ComplementaryPairOne5551-TypeNPN One5401-TypePNP •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

MMDT5451

NPN/PNP Plastic-Encapsulate Transistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •One5551-TypeNPN,One5401-TypePNP •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:KNM •Halogenfreeavailableuponrequestbyaddingsuffix

MMDT5451

Marking：KNM；Package：SOT-363；Small Surface Mount Transistor

FEATURES ●Complementarypair. ●Idealforlowpoweramplification andswitching. ●Ultra-Smallsurfacemountpackage. ●Epitaxialplanardieconstruction. APPLICATIONS ●Generalswitchingandamplification.

MMDT5451

DUAL TRANSISTOR

DUALTRANSISTOR(NPN+PNP) FEATURES ●EpitaxialPlanarDieConstruction ●IdealforlowPowerAmplificationandSwitching ●One5551(NPN),one5401(PNP)

MMDT5451

Multi-Chip General Purpose TRANSISTOR (PNP and NPN)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:±200mA Collector-basevoltage V(BR)CBO:180/-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

MMDT5451

Marking：KNM；Package：SOT-363；Small Surface Mount Transistor

FEATURES ●Complementarypair. ●Idealforlowpoweramplification andswitching. ●Ultra-Smallsurfacemountpackage. ●Epitaxialplanardieconstruction. APPLICATIONS ●Generalswitchingandamplification.