General Purpose Transistors

General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available

文件：118.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

General Purpose Transistor(PNP Silicon)

PNP Silicon General Purpose Transistor

文件：192.86 Kbytes 页数：4 Pages

LRC

乐山无线电

General Purpose Transistors

PNP Silicon General Purpose Transistors

文件：247.41 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：39.69 Kbytes 页数：1 Pages

AVICTEK

PNP EPITAXIAL PLANAR TRANSISTOR

Description The MMBT2907ALT1 is designed for general purpose amplifier and high-speed switching, medium power switching applications. Features • Low Collector Saturation Voltage. • High Speed Switching. • For Complementary Use With NPN Type HMBT2222A. Absolute Maximum Ratings

文件：41.76 Kbytes 页数：3 Pages

TGS

General Purpose Transistor PNP Silicon

• RoHS product for packing code suffix G, Weight : 0.008g • Halogen free product for packing code suffix H.

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WILLAS

威伦电子

丝印：2F；Package：SOT-23；TRANSISTOR竊늁NP竊

文件：437.9 Kbytes 页数：4 Pages

TGS

SOT-23 Plastic-Encapsulate PNP Transistors

FEATURES\nPower dissipation\n  PCM: 0.3 W (Tamb=25℃)\nCollector current\n  ICM: -0.6 A\nCollector-base voltage\n  V(BR)CBO: -60 V\nOperating and storage junction temperature range\n  TJ, Tstg: -55℃ to +150℃ Power dissipation\n  PCM: 0.3 W (Tamb=25℃)\nCollector current\n  ICM: -0.6 A\nCollector-base voltage\n  V(BR)CBO: -60 V\nOperating and storage junction temperature range\n  TJ, Tstg: -55℃ to +150℃;

AVICTEK

Switching Transistors

UN-SEMI

友恩半导体

PNP Silicon General Purpose Transistors

恩XP