MMBT4354: PNP General Purpose Amplifier

MMBT4354 该器件设计用作要求集电极电流达到500mA的通用放大器和开关。\n 采用工艺 67 设计。\n 如需相关特性，请参见 TN4033A。;

ONSEMI

安森美半导体

PNP General Purpose Amplifier

PNP General Purpose Amplifier • This device is deisgned for use as general purpose amplifiers and switch requiring collector currents to 500mA. • Sourced from process 67. • TN4033A for characteristics.

文件：47.62 Kbytes 页数：4 Pages

Fairchild

仙童半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.8A SOT23-3

ONSEMI

安森美半导体

SILICON PNP TRANSISTORS

SILICON PNP TRANSISTORS JEDEC TO-105 JEDEC TO-92 (EBC)

文件：86.4 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID

DESCRIPTION: The MSK 4354 is a 10 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 600 volt rating on the output switches. The output switches are Insulated Gate Bipolar Transistors (IGBTs). The free-wheeling diodes are Fast Recovery Epitaxial Diodes (FREDs) to provide matched current ca

文件：260.16 Kbytes 页数：6 Pages

MSK

10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID

DESCRIPTION: The MSK 4354 is a 10 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 600 volt rating on the output switches. The output switches are Insulated Gate Bipolar Transistors (IGBTs). The free-wheeling diodes are Fast Recovery Epitaxial Diodes (FREDs) to provide matched current ca

文件：260.16 Kbytes 页数：6 Pages

MSK