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型号	下载订购	功能描述	制造商上传企业	LOGO
MJD44H11	文件：192.88 Kbytes Page：6 Pages	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra 文件：192.88 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11	文件：64.379 Kbytes Page：5 Pages	COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app 文件：64.379 Kbytes 页数：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD44H11	文件：241.83 Kbytes Page：12 Pages	丝印：MJD44H11；Package：DPAK；80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele 文件：241.83 Kbytes 页数：12 Pages	NEXPERIA 安世	NEXPERIA
MJD44H11_V01	文件：310.51 Kbytes Page：11 Pages	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ 文件：310.51 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-001	文件：192.88 Kbytes Page：6 Pages	SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra 文件：192.88 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1	文件：192.88 Kbytes Page：6 Pages	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S 文件：192.88 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJD44H11-1G	文件：132.18 Kbytes Page：9 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in 文件：132.18 Kbytes 页数：9 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-1G	文件：310.51 Kbytes Page：11 Pages	Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ 文件：310.51 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD44H11-252	文件：342.76 Kbytes Page：2 Pages	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in appl 文件：342.76 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MJD44H11A	文件：242.13 Kbytes Page：12 Pages	丝印：MJD44H11A；Package：DPAK；80 V, 8 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El 文件：242.13 Kbytes 页数：12 Pages	NEXPERIA 安世	NEXPERIA

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晶体管资料

型号：
MJD44H11
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
低频或音频放大（LF）_功率放大（PA）
封装形式：
贴片封装
极限工作电压：
最大电流允许值：
8A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
20W
放大倍数：
图片代号：
G-217
vtest：
0
htest：
999900
atest：
8
wtest：
20

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
NPN
IC Continuous (A)：
10
V(BR)CEO Min (V)：
80
VCE(sat) Max (V)：
1.5
hFE Min (k)：
1
Package Type：
DPAK-3

供应商	型号	品牌	批号	封装	库存	备注	价格
谛辉(北京/上海/青岛 )电子科技有限公司	MJD44H11RL	MOTOROLA	25+	SOP8	18000	原厂直接发货进口原装	询价
深圳市一线半导体有限公司	MJD44H11-T4		24+		5000	公司存货	询价
深圳市毅创腾电子科技有限公司	MJD44H11T4G	ON		TO-252	2000	正品原装--自家现货-实单可谈	询价
深圳市联世界科技有限公司	MJD44H11-1G	ON	24+/25+		3675	原装正品现货库存价优	询价
深圳市勤思达科技有限公司	MJD44E3T4	ON	12+	TO-251	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市恒创达实业有限公司	MJD44H11RLG	ON	17+	TO252	6200	100%原装正品现货	询价
深圳市粤科源兴科技有限公司	MJD44H11T4	DISCRETE	2500	STM	57500		询价
芯有半导体（深圳）有限公司	MJD44H11T4	MOT	05+	原厂原装	2551	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	MJD44H11	ONSEMICONDU	24+	原装进口原厂原包接受订货	392	原装现货假一罚十	询价
齐创科技(上海,北京,青岛)有限公司	MJD44H11T4G	ON	23+	TO-252	30000	原装正品,假一罚十	询价

更多MJD44供应商更新时间2026-1-26 18:30:00

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