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MJD44H11-1

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJD44H11-1G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11-1G

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11-1G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44H11-1G

Package:TO-251-3 短引线,IPak,TO-251AA;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 8A IPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    MJD44H11-1

  • 功能描述:

    两极晶体管 - BJT 8A 80V 20W NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
0N/MOT
23+
TO
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON
24+/25+
3675
原装正品现货库存价优
询价
ON
24+
DPAK3(SINGLEGAUGE
8866
询价
ON
1651+
?
7500
只做原装进口,假一罚十
询价
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
25+23+
TO-251
34856
绝对原装正品全新进口深圳现货
询价
安森美
21+
12588
原装现货,价格优势
询价
三年内
1983
只做原装正品
询价
ON/安森美
19+
IPAK-3
30000
原装正品,价格优
询价
ON
5224
原装正品
询价
更多MJD44H11-1供应商 更新时间2025-7-20 11:10:00