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MJD44

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular MJE44H • Fast Switching Speeds

文件:36.29 Kbytes 页数:4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD44

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

文件:80.96 Kbytes 页数:4 Pages

Motorola

摩托罗拉

MJD44

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

文件:64.379 Kbytes 页数:5 Pages

STMICROELECTRONICS

意法半导体

MJD44H11

丝印:MJD44H11;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

文件:241.83 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD44H11A

丝印:MJD44H11A;Package:DPAK;80 V, 8 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件:242.13 Kbytes 页数:12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MJD44E3

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·High DC Current Gain : hFE = 1000(Min)@ IC= 5A ·Low Collector-Emitter Saturation Voltage : VCE(sat) = 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed swi

文件:309.33 Kbytes 页数:2 Pages

ISC

无锡固电

MJD44E3

NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Application . . . for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suf

文件:80.96 Kbytes 页数:4 Pages

Motorola

摩托罗拉

MJD44E3

Darlington Power Transistor DPAK For Surface Mount Applications

Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features  Electrically Similar to Popular D44E3 Device  High DC Gain − 1000 Min @ 5.0 Adc  Low Sat. Voltage − 1.5 V @ 5.0 Adc  Compati

文件:202.57 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MJD44E3

NPN DARLINGTON PLASTIC POWER TRANSISTOR

NPN DARLINGTON PLASTIC POWER TRANSISTOR For General Purpose Power and Switching Output or Driver Stages in Applications such as Switching Regulators, Converters and Power Amplifiers

文件:96.61 Kbytes 页数:5 Pages

CDIL

MJD44E3

Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS

Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Electrically Similar to Popular D44E3 Device • High DC Gain − 100

文件:50.87 Kbytes 页数:3 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    10

  • V(BR)CEO Min (V):

    80

  • VCE(sat) Max (V):

    1.5

  • hFE Min (k):

    1

  • Package Type:

    DPAK-3

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO-252
30000
只做正品原装现货
询价
MOTOROLA
25+
SOP8
18000
原厂直接发货进口原装
询价
24+
5000
公司存货
询价
ON
TO-252
2000
正品原装--自家现货-实单可谈
询价
ON
24+/25+
3675
原装正品现货库存价优
询价
ON
12+
TO-251
15000
全新原装,绝对正品,公司现货供应。
询价
ON
17+
TO252
6200
100%原装正品现货
询价
DISCRETE
2500
STM
57500
询价
MOT
05+
原厂原装
2551
只做全新原装真实现货供应
询价
ONSEMICONDU
24+
原装进口原厂原包接受订货
392
原装现货假一罚十
询价
更多MJD44供应商 更新时间2025-10-12 9:03:00