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MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件:91.56 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

MJD122-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件:284.04 Kbytes 页数:8 Pages

MOTOROLA

摩托罗拉

MJD122-251

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:296.14 Kbytes 页数:2 Pages

ISC

无锡固电

MJD122-252

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:277.2 Kbytes 页数:2 Pages

ISC

无锡固电

MJD122I

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

文件:427.28 Kbytes 页数:2 Pages

FS

MJD122NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

文件:408.73 Kbytes 页数:5 Pages

CDIL

MJD122T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件:284.04 Kbytes 页数:8 Pages

MOTOROLA

摩托罗拉

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件:91.56 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件:91.56 Kbytes 页数:8 Pages

STMICROELECTRONICS

意法半导体

MJD122-TP

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

文件:277.83 Kbytes 页数:3 Pages

MCC

晶体管资料

  • 型号:

    MJD112

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Darl

  • 性质:

    低频或音频放大 (LF)

  • 封装形式:

    贴片封装

  • 极限工作电压:

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    20W

  • 放大倍数:

  • 图片代号:

    G-217

  • vtest:

    0

  • htest:

    999900

  • atest:

    2

  • wtest:

    20

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    2

  • V(BR)CEO Min (V):

    100

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    1

  • hFE Max (k):

    12

  • fT Min (MHz):

    25

  • Package Type:

    DPAK INSERTION MOUNT

供应商型号品牌批号封装库存备注价格
CJ/长电
25+
TO-251-3L
20300
CJ/长电原装特价MJD112即刻询购立享优惠#长期有货
询价
ON
24+
TO-252-2
85600
全新原装现货/假一罚百!
询价
CJ
23+
TO-252
7050
原厂原装正品
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
ONSEMI
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
1415+
TO-252
28500
全新原装正品,优势热卖
询价
24+
SOT252
1000
询价
MOT
05+
原厂原装
2940
只做全新原装真实现货供应
询价
ONSEMICONDU
24+
原封装
4206
原装现货假一罚十
询价
更多MJD1供应商 更新时间2026-4-17 18:03:00