Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：300.34 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件：281.37 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

文件：1.541 Mbytes 页数：3 Pages

JIANGSU

长电科技

丝印：D-PAK；Package：TO-252；PNP Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP127 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

文件：360.31 Kbytes 页数：2 Pages

FS

D-PAK for Surface Mount Applications

• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

文件：69.15 Kbytes 页数：4 Pages

SYC

丝印：MJD127；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C

文件：2.32459 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR (PNP) Feature ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

文件：2.18315 Mbytes 页数：3 Pages

HDSEMI

海德半导体

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

文件：91.56 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

文件：284.04 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉