MJD112技术资料参数供应价格FAIRCHILD第6页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MJD117-251	文件：300.27 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件：300.27 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MJD117-252	文件：281.3 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. 文件：281.3 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MJD117G	文件：207.94 Kbytes Page：11 Pages	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( 文件：207.94 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD117G	文件：152.64 Kbytes Page：10 Pages	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− 文件：152.64 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJD117G	文件：147.74 Kbytes Page：8 Pages	Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications 文件：147.74 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJD117-I	文件：59.25 Kbytes Page：5 Pages	D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 文件：59.25 Kbytes 页数：5 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
MJD117L	文件：394.75 Kbytes Page：2 Pages	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. 文件：394.75 Kbytes 页数：2 Pages	KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司	KEC
MJD117PNP	文件：90.16 Kbytes Page：6 Pages	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications 文件：90.16 Kbytes 页数：6 Pages	CDIL	CDIL
MJD117RLG	文件：152.64 Kbytes Page：10 Pages	Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− 文件：152.64 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJD117RLG	文件：207.94 Kbytes Page：11 Pages	Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( 文件：207.94 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI

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晶体管资料

型号：
MJD112
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Darl
性质：
低频或音频放大（LF）
封装形式：
贴片封装
极限工作电压：
最大电流允许值：
2A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
20W
放大倍数：
图片代号：
G-217
vtest：
0
htest：
999900
atest：
2
wtest：
20

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
NPN
IC Continuous (A)：
2
V(BR)CEO Min (V)：
100
VCE(sat) Max (V)：
2
hFE Min (k)：
1
hFE Max (k)：
12
fT Min (MHz)：
25
Package Type：
DPAK INSERTION MOUNT

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	MJD112	CJ/长电	25+	TO-251-3L	20300	CJ/长电原装特价MJD112即刻询购立享优惠#长期有货	询价
瀚佳科技(深圳)有限公司	MJD112	ON	24+	TO-252-2	85600	全新原装现货/假一罚百!	询价
深圳市科翼源电子有限公司	MJD112	CJ	23+	TO-252	7050	原厂原装正品	询价
深圳市创新迹电子有限公司	MJD112	CJ/长电	2021+	TO-252	9000	原装现货,随时欢迎询价	询价
深圳市科恒伟业电子有限公司	MJD112	CJ	2450+	TO-252	9850	只做原装正品现货或订货假一赔十!	询价
深圳市高捷芯城科技有限公司	MJD112	ONSEMI	25+	N/A	21000	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市勤思达科技有限公司	MJD112		1415+	TO-252	28500	全新原装正品,优势热卖	询价
深圳市一线半导体有限公司	MJD112		24+	SOT252	1000		询价
芯有半导体（深圳）有限公司	MJD112	MOT	05+	原厂原装	2940	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	MJD112	ONSEMICONDU	24+	原封装	4206	原装现货假一罚十	询价

更多MJD1供应商更新时间2026-4-17 16:08:00

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