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MJD117

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117

文件:59.25 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

MJD117

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC current gain • Built-in a damper diode at E-C • Lead formed for surface mount applications(NO suffix) • Straight lead(IPAK,“ -I” suffix) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designe

文件:286.91 Kbytes 页数:3 Pages

ISC

无锡固电

MJD117

Silicon PNP Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:300.27 Kbytes 页数:2 Pages

ISC

无锡固电

MJD117

Silicon PNP Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

文件:281.3 Kbytes 页数:2 Pages

ISC

无锡固电

MJD117

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to MJD112

文件:275.25 Kbytes 页数:2 Pages

JIANGSU

长电科技

MJD117

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin

文件:84.64 Kbytes 页数:6 Pages

STMICROELECTRONICS

意法半导体

MJD117

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. Applications Medium power switching applications.

文件:793.68 Kbytes 页数:6 Pages

FOSHAN

蓝箭电子

MJD117-001

Complementary Darlington Power Transistors

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications

文件:147.74 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MJD117-1G

Complementary Darlington Power Transistors DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−

文件:152.64 Kbytes 页数:10 Pages

ONSEMI

安森美半导体

MJD117-1G

Complementary Darlington Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (

文件:207.94 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

晶体管资料

  • 型号:

    MJD112

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Darl

  • 性质:

    低频或音频放大 (LF)

  • 封装形式:

    贴片封装

  • 极限工作电压:

  • 最大电流允许值:

    2A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

    20W

  • 放大倍数:

  • 图片代号:

    G-217

  • vtest:

    0

  • htest:

    999900

  • atest:

    2

  • wtest:

    20

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Polarity:

    NPN

  • IC Continuous (A):

    2

  • V(BR)CEO Min (V):

    100

  • VCE(sat) Max (V):

    2

  • hFE Min (k):

    1

  • hFE Max (k):

    12

  • fT Min (MHz):

    25

  • Package Type:

    DPAK INSERTION MOUNT

供应商型号品牌批号封装库存备注价格
CJ/长电
25+
TO-251-3L
20300
CJ/长电原装特价MJD112即刻询购立享优惠#长期有货
询价
ON
24+
TO-252-2
85600
全新原装现货/假一罚百!
询价
CJ
23+
TO-252
7050
原厂原装正品
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
ONSEMI
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
1415+
TO-252
28500
全新原装正品,优势热卖
询价
24+
SOT252
1000
询价
MOT
05+
原厂原装
2940
只做全新原装真实现货供应
询价
ONSEMICONDU
24+
原封装
4206
原装现货假一罚十
询价
更多MJD1供应商 更新时间2026-4-17 16:08:00