MJ资料使用说明书贸易商石英公司第29页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MJ14002	文件：241.69 Kbytes Page：6 Pages	COMPLEMENTARY SILICON POWER TRANSITORS Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa 文件：241.69 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJ14002	文件：241.69 Kbytes Page：6 Pages	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — 文件：241.69 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJ14003	文件：241.69 Kbytes Page：6 Pages	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — 文件：241.69 Kbytes 页数：6 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJ14003	文件：241.69 Kbytes Page：6 Pages	COMPLEMENTARY SILICON POWER TRANSITORS Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa 文件：241.69 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJ1500	文件：72.47 Kbytes Page：1 Pages	NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to MJ15002 文件：72.47 Kbytes 页数：1 Pages	WINGS 永盛电子	WINGS
MJ15001	文件：165.74 Kbytes Page：4 Pages	POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V 文件：165.74 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15002	文件：165.74 Kbytes Page：4 Pages	POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V 文件：165.74 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15003	文件：60.31 Kbytes Page：3 Pages	Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* 文件：60.31 Kbytes 页数：3 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15003	文件：156.12 Kbytes Page：3 Pages	POWER TRANSISTORS(20A,140V,250W) 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS 文件：156.12 Kbytes 页数：3 Pages	MOSPEC 统懋	MOSPEC
MJ15003	文件：119.49 Kbytes Page：4 Pages	20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — 文件：119.49 Kbytes 页数：4 Pages	MOTOROLA 摩托罗拉	MOTOROLA

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替换型号

晶体管资料

型号：
MJ1000
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-N+Darl+Di
性质：
低频或音频放大（LF）_开关管（S）_功率放大（L
封装形式：
直插封装
极限工作电压：
60V
最大电流允许值：
8A
最大工作频率：
<1MHZ或未知
引脚数：
2
可代换的型号：
BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,
最大耗散功率：
90W
放大倍数：
β>1000
图片代号：
E-44
vtest：
60
htest：
999900
atest：
8
wtest：
90

技术参数

Bvdss(V)：
120
Id(A)：
100
Vgs(th)(V)：
2.0-4.0
Rds(on)Max@10V(mΩ)：
10
Qg(nc)：
55
Ciss(pF)：
4150
Rg(Ω)：
3.2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市旺财半导体有限公司	ML		23+	SOP	16567	正品:QQ;2987726803	询价
深圳市恒创达实业有限公司	MO	TI	2021	BGA	1000	全新、原装	询价
深圳市鸿昌盛电子科技有限公司	MPM3695GBH-100-0001	N/A	25+	SMD	1000	原装进口支持检测	询价
深圳市金芯世纪电子有限公司	MQ	TOSHIBA/东芝	22+	SOT-89	100000	代理渠道/只做原装/可含税	询价
深圳市威尔健半导体有限公司	MR	XX	23+	SOT-234	50000	全新原装正品现货,支持订货	询价
上海金庆电子技术有限公司	MR	XX		SOT-234	9045		询价
深圳市三芯电子有限公司	MS1006	Relmon/瑞盟	25+	QFN20	5000	只做原装正品实单带TP来砍	询价

更多MJ供应商更新时间2026-1-27 10:31:00

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