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MJ15003

POWER TRANSISTORS(20A,140V,250W)

20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS

文件:156.12 Kbytes 页数:3 Pages

MOSPEC

统懋

MJ15003

Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3

Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi

文件:449.83 Kbytes 页数:3 Pages

MULTICOMP

易络盟

MJ15003

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ15004

文件:47.16 Kbytes 页数:1 Pages

WINGS

永盛电子

MJ15003

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications

文件:111.12 Kbytes 页数:3 Pages

SAVANTIC

MJ15003

Complementary Silicon power transistors (20A / 140V / 250W)

DESCRIPTION The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. FEATURES ● Designed for general-purpose switching and amp

文件:208.44 Kbytes 页数:4 Pages

NELLSEMI

尼尔半导体

MJ15003

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications

文件:129.699 Kbytes 页数:3 Pages

ISC

无锡固电

MJ15003G

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

文件:60.31 Kbytes 页数:3 Pages

ONSEMI

安森美半导体

MJ15004

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

文件:60.31 Kbytes 页数:3 Pages

ONSEMI

安森美半导体

MJ15004

Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3

Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi

文件:449.83 Kbytes 页数:3 Pages

MULTICOMP

易络盟

MJ15004

POWER TRANSISTORS(20A,140V,250W)

20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS

文件:156.12 Kbytes 页数:3 Pages

MOSPEC

统懋

晶体管资料

  • 型号:

    MJ1000

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,

  • 最大耗散功率:

    90W

  • 放大倍数:

    β>1000

  • 图片代号:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    8

  • wtest:

    90

技术参数

  • Bvdss(V):

    120

  • Id(A):

    100

  • Vgs(th)(V):

    2.0-4.0

  • Rds(on)Max@10V(mΩ):

    10

  • Qg(nc):

    55

  • Ciss(pF):

    4150

  • Rg(Ω):

    3.2

供应商型号品牌批号封装库存备注价格
23+
SOP
16567
正品:QQ;2987726803
询价
TI
2021
BGA
1000
全新、原装
询价
N/A
25+
SMD
1000
原装进口支持检测
询价
XX
23+
SOT-234
50000
全新原装正品现货,支持订货
询价
XX
SOT-234
9045
全新 发货1-2天
询价
Relmon/瑞盟
25+
QFN20
5000
只做原装正品实单带TP来砍
询价
更多MJ供应商 更新时间2026-3-16 10:31:00