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型号	下载订购	功能描述	制造商上传企业	LOGO
MJ15004	文件：119.49 Kbytes Page：4 Pages	20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — 文件：119.49 Kbytes 页数：4 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MJ15004	文件：111.36 Kbytes Page：3 Pages	Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ15003 ·Excellent safe operating area APPLICATIONS ·For high power audio,disk head positioners and other linear applications 文件：111.36 Kbytes 页数：3 Pages	SAVANTIC	SAVANTIC
MJ15004	文件：47.18 Kbytes Page：1 Pages	PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ15015 文件：47.18 Kbytes 页数：1 Pages	WINGS 永盛电子	WINGS
MJ15004G	文件：60.31 Kbytes Page：3 Pages	Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* 文件：60.31 Kbytes 页数：3 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15011	文件：61.77 Kbytes Page：4 Pages	Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui 文件：61.77 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15011	文件：78.2 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-: hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-: VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to Type MJ15012 APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. 文件：78.2 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MJ15011G	文件：61.77 Kbytes Page：4 Pages	Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui 文件：61.77 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15012	文件：61.77 Kbytes Page：4 Pages	Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui 文件：61.77 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15012G	文件：61.77 Kbytes Page：4 Pages	Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui 文件：61.77 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJ15015	文件：235.85 Kbytes Page：6 Pages	COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d 文件：235.85 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI

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替换型号

晶体管资料

型号：
MJ1000
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-N+Darl+Di
性质：
低频或音频放大（LF）_开关管（S）_功率放大（L
封装形式：
直插封装
极限工作电压：
60V
最大电流允许值：
8A
最大工作频率：
<1MHZ或未知
引脚数：
2
可代换的型号：
BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,
最大耗散功率：
90W
放大倍数：
β>1000
图片代号：
E-44
vtest：
60
htest：
999900
atest：
8
wtest：
90

技术参数

Bvdss(V)：
120
Id(A)：
100
Vgs(th)(V)：
2.0-4.0
Rds(on)Max@10V(mΩ)：
10
Qg(nc)：
55
Ciss(pF)：
4150
Rg(Ω)：
3.2

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市旺财半导体有限公司	ML		23+	SOP	16567	正品:QQ;2987726803	询价
深圳市恒创达实业有限公司	MO	TI	2021	BGA	1000	全新、原装	询价
深圳市鸿昌盛电子科技有限公司	MPM3695GBH-100-0001	N/A	25+	SMD	1000	原装进口支持检测	询价
深圳市威尔健半导体有限公司	MR	XX	23+	SOT-234	50000	全新原装正品现货,支持订货	询价
上海金庆电子技术有限公司	MR	XX		SOT-234	9045	全新发货1-2天	询价
深圳市三芯电子有限公司	MS1006	Relmon/瑞盟	25+	QFN20	5000	只做原装正品实单带TP来砍	询价

更多MJ供应商更新时间2026-3-17 10:30:00

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