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MJ13333

NPN SILICON POWER TRANSISTORS

The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • D

文件:278.67 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MJ13333

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode appl

文件:91.25 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJ13333

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode appl

文件:278.04 Kbytes 页数:2 Pages

ISC

无锡固电

MJ13334

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. •

文件:278.04 Kbytes 页数:2 Pages

ISC

无锡固电

MJ13334

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. •

文件:84.2 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJ13334

SWITCHMODE SERIES NPN SILICON TRANSISTORS

SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers

文件:83.24 Kbytes 页数:2 Pages

MOSPEC

统懋

MJ13335

SWITCHMODE SERIES NPN SILICON TRANSISTORS

SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers

文件:83.24 Kbytes 页数:2 Pages

MOSPEC

统懋

MJ13335

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic ularly suited for line operated switchmode applicati

文件:278.03 Kbytes 页数:2 Pages

ISC

无锡固电

MJ1-3510-SMT-TR

AUDIO JACK

FEATURES • 3.5 mm • right angle • reflow solder compatible • surface mount

文件:454.42 Kbytes 页数:4 Pages

CUID

MJ14001

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —

文件:241.69 Kbytes 页数:6 Pages

MOTOROLA

摩托罗拉

晶体管资料

  • 型号:

    MJ1000

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+Darl+Di

  • 性质:

    低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    8A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    2

  • 可代换的型号:

    BDV65(A...C),BDX63(A...C)BDX65,FH8C,MJ3000,2N6055,2N6056,

  • 最大耗散功率:

    90W

  • 放大倍数:

    β>1000

  • 图片代号:

    E-44

  • vtest:

    60

  • htest:

    999900

  • atest:

    8

  • wtest:

    90

技术参数

  • Bvdss(V):

    120

  • Id(A):

    100

  • Vgs(th)(V):

    2.0-4.0

  • Rds(on)Max@10V(mΩ):

    10

  • Qg(nc):

    55

  • Ciss(pF):

    4150

  • Rg(Ω):

    3.2

供应商型号品牌批号封装库存备注价格
23+
SOP
16567
正品:QQ;2987726803
询价
TI
2021
BGA
1000
全新、原装
询价
N/A
25+
SMD
1000
原装进口支持检测
询价
XX
23+
SOT-234
50000
全新原装正品现货,支持订货
询价
XX
SOT-234
9045
全新 发货1-2天
询价
Relmon/瑞盟
25+
QFN20
5000
只做原装正品实单带TP来砍
询价
更多MJ供应商 更新时间2026-3-16 10:31:00