Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

文件：229.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(15A,150-250V,175W)

15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN

文件：206.76 Kbytes 页数：4 Pages

MOSPEC

统懋

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus

文件：235.08 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Complementary Darlington Silicon Power Transistors

Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High dc Current Gain @ 10 Adc − hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min)

文件：229.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

文件：153.97 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

文件：154.67 Kbytes 页数：3 Pages

MOSPEC

统懋

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

文件：153.97 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

文件：84.48 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

文件：59.19 Kbytes 页数：2 Pages

SEME-LAB

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

文件：59.19 Kbytes 页数：2 Pages

SEME-LAB